Mfg Part Number: 2N6508G | NSN : 5961-01-267-2280 | NIIN : 012672280 |
CAGE Code : 5FWY4 | Manufacturer: Littlefuse World Hq | Item Name : Semiconductor Device Thyristor |
FSC : 5961 Semiconductor Devices and Associated Hardware |
Thank you for your continued interest in 2N6508G under NSN 5961-01-267-2280 components available for purchase on Integrated Plane Parts. The Semiconductor Device Thyristor item associated with the part number 2N6508G, manufactured by Littlefuse World Hq, is currently available on our database; as such, we ask that you please fill out and submit an Instant RFQ form detailing your requirements on parts needed. Details should include desired quantities, target prices, expected shipping time frames, and more, as applicable. Upon receipt of a completed form of 2N6508G, our representatives will harness your provided information and formulate a solution which satisfies your operational needs in just 15 minutes or less.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-267-2280 Item Description: Semiconductor Device Thyristor | 5961 | 012672280 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
2n6508g | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 16.51 MILLIMETERS MAXIMUM |
ABJT | TERMINAL LENGTH | 14.73 MILLIMETERS MAXIMUM |
ABMK | OVERALL WIDTH | 10.66 MILLIMETERS MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES FORWARD CURRENT, TOTAL RMS HORSEPOWER METRIC AND 300.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 129.0 DEG CELSIUS CASE |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
ABBH | INCLOSURE MATERIAL | METAL AND PLASTIC |
ABKW | OVERALL HEIGHT | 4.82 MILLIMETERS MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR UNIVERSAL AND 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK |
TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
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