Quote for 2N6661750 with NSN 5961-01-085-3419 by Siliconix Incorporated Div Silic

Mfg Part Number: 2N6661750	NSN : 5961-01-085-3419	NIIN : 010853419
CAGE Code : 17856	Manufacturer: Siliconix Incorporated Div Silic	Item Name : Transistor
FSC : 5961 Semiconductor Devices and Associated Hardware

Thank you for your continued interest in 2N6661750 under NSN 5961-01-085-3419 components available for purchase on Integrated Plane Parts. The Transistor item associated with the part number 2N6661750, manufactured by Siliconix Incorporated Div Silic, is currently available on our database; as such, we ask that you please fill out and submit an Instant RFQ form detailing your requirements on parts needed. Details should include desired quantities, target prices, expected shipping time frames, and more, as applicable. Upon receipt of a completed form of 2N6661750, our representatives will harness your provided information and formulate a solution which satisfies your operational needs in just 15 minutes or less.

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Characteristics Data of NSN 5961-01-085-3419, 5961010853419

MRC	Criteria	Characteristic
ASCQ	INTERNAL JUNCTION CONFIGURATION	PIN
AYQS	TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL
CTQX	CURRENT RATING PER CHARACTERISTIC	10.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 500.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
ABHP	OVERALL LENGTH	0.260 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	0.500 INCHES NOMINAL
ALAS	INTERNAL CONFIGURATION	JUNCTION CONTACT-DARLINGTON CONNECTED
AXGY	MOUNTING METHOD	TERMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	2.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 1.6 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CTRD	POWER RATING PER CHARACTERISTIC	8.3 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
TTQY	TERMINAL TYPE AND QUANTITY	3 PIN
ABBH	INCLOSURE MATERIAL	METAL
ADAV	OVERALL DIAMETER	0.370 INCHES MAXIMUM
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 DEG CELSIUS AMBIENT AIR